Inductive determination of the optimum tunnel barrier thickness in magnetic tunneling junction stacks for spin torque memory applications

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Serrano Guisan, S ^a   Skowronski, W ^b   Wrona, J ^b   Liebing, N ^a   Czapkiewicz, M ^b   Stobiecki, T ^b   Reiss, G ^c   Schumacher, H W ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^c BIELEFELD UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPARALLEL ORIENTATIONS; BARRIER THICKNESS; EFFECTIVE DAMPING; FIELD DEPENDENCE; FREE LAYERS; INDUCTIVE MEASUREMENT; LOW CURRENT DENSITY; MAGNETIC TUNNELING JUNCTIONS; MAGNETIZATION DYNAMICS; MAGNETOTRANSPORTS; MEMORY APPLICATIONS; MGO BARRIER; PINNED LAYERS; PRECESSION FREQUENCY; PULSED INDUCTIVE MICROWAVE MAGNETOMETRIES; SPIN TORQUE; TUNNEL BARRIER; UNIAXIAL ANISOTROPY; WAFER PROBES;

DAMPING; MAGNETIZATION REVERSAL;

SPIN DYNAMICS;

EID: 79961104523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3610948     Document Type: Article

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