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Volumn 83, Issue 7, 2011, Pages

Graphene on the carbon face of SiC: Electronic structure modification by hydrogen intercalation

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Indexed keywords


EID: 79961052051     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.075438     Document Type: Article
Times cited : (15)

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    • See supplemental material at [http://link.aps.org/supplemental/10.1103/ PhysRevB.83.075438] for results on the C2, C3, and C4 defect configurations and for a configuration where the graphene layer is shifted with respect to the previous ones.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.