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Volumn 79, Issue 24, 2009, Pages

Magnetization-driven metal-insulator transition in strongly disordered Ge:Mn magnetic semiconductors

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Indexed keywords


EID: 67649976826     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.241202     Document Type: Article
Times cited : (21)

References (15)
  • 11
    • 67649989095 scopus 로고    scopus 로고
    • Although beyond the scope of this Rapid Communication, we wish to note that in the insulating phase below 4.2 K magnetoresistance changes its character and follows an unusual H3/2 field dependence.
    • Although beyond the scope of this Rapid Communication, we wish to note that in the insulating phase below 4.2 K magnetoresistance changes its character and follows an unusual H3/2 field dependence.
  • 14
    • 35848966383 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.76.205202
    • M. Foygel and A. G. Petukhov, Phys. Rev. B 76, 205202 (2007). 10.1103/PhysRevB.76.205202
    • (2007) Phys. Rev. B , vol.76 , pp. 205202
    • Foygel, M.1    Petukhov, A.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.