MBE growth and properties of GeMn thin films on (0 0 1) GaAs

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 937-940

  Tsuchida, R ^a   Asubar, J T ^a   Jinbo, Y ^a   Uchitomi, N ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting germanium

Indexed keywords

CRYSTAL GROWTH; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; GERMANIUM; HALL EFFECT; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SOLIDS; SUBSTRATES; THIN FILMS;

A3. MOLECULAR BEAM EPITAXY; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING GERMANIUM; GAAS; GAAS SUBSTRATES; HOST MATRICES; INTER DIFFUSIONS; MBE GROWTHS; MOLECULAR-BEAM EPITAXIES; NEGATIVE MAGNETO RESISTANCES; ROOM TEMPERATURES; SEMI-INSULATING; SUBSTRATE TEMPERATURES; TRANSPORT AND MAGNETIC PROPERTIES;

MAGNETIC THIN FILMS;

EID: 59749085075     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.112     Document Type: Article

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