Optical calibration for nanocalorimeter measurements

Thermochimica Acta

Volumn 522, Issue 1-2, 2011, Pages 60-65

  Swaminathan, P ^a,b   Burke, B G ^b   Holness, A E ^b   Wilthan, B ^b   Hanssen, L ^b   Weihs, T P ^a   Lavan, D A ^b  

^a Johns Hopkins University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Calibration; Melting point; Nanocalorimeter; Nanocalorimetry; Platinum emissivity; Thin film

Indexed keywords

FINITE ELEMENT MODELING; GAUSSIAN FITS; NANOCALORIMETER; NANOCALORIMETERS; NANOCALORIMETRY; OPTICAL CALIBRATION; OPTICAL PYROMETRY; PLATINUM THIN FILM; PURE ALUMINUM; RESISTIVE HEATING; SILICON NITRIDE MEMBRANE;

ELECTROMAGNETIC WAVE EMISSION; MELTING POINT; PHASE TRANSITIONS; PLATINUM; PYROMETERS; PYROMETRY; SILICON NITRIDE; THIN FILMS;

CALIBRATION;

EID: 79960951716     PISSN: 00406031     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tca.2011.03.006     Document Type: Article

References (21)

1. M.Y. Efremov, E.A. Olsen, M. Zhang, F. Schiettekatte, Z. Zhang, and L.H. Allen Rev. Sci. Instrum. 75 2004 179 191
2. S.L. Lai, J.Y. Guo, V. Petrova, G. Ramanath, and L.H. Allen Phys. Rev. Lett. 77 1996 99 102
3. A.W. van Herwaarden Thermochim. Acta 432 2005 192 201
4. C. Michaelsen, K. Barmak, and T.P. Weihs J. Phys. D 30 1997 3167 3186
5. J.C. Trenkle, L.J. Koerner, M.W. Tate, N. Walker, S.M. Gruner, T.P. Weihs, and T.C. Hufnagel J. Appl. Phys. 107 2010 113511-1 113511-12
6. A.F. Lopeandia, J. Rodriguez-Viejo, M. Chacon, M.T. Clavaguera-Mora, and F.J. Munoz J. Micromech. Microeng. 16 2006 965 971
7. R.K. Kummamuru, L.D.L. Rama, L. Hu, M.D. Vaudin, M.Y. Efremov, M.L. Green, D.A. LaVan, and L.H. Allen Appl. Phys. Lett. 95 2009 181911-1 181911-3
8. E.A. Olsen, M.Y. Efremov, M. Zhang, Z. Zhang, and L.H. Allen J. Microelec. Syst. 12 2003 355 364
9. R.K. Kummamuru, L. Hu, L. Cook, M.Y. Efremov, E.A. Olsen, and L.H. Allen J. Micromech. Microeng. 18 2008 095027-1 095027-9
10. C.P. Cagran, L.M. Hanssen, M. Noorma, A.V. Gura, and S.N. Mekhontsev Int. J. Thermophys. 28 2007 581 597
11. S. Deemyad, and I.F. Silvera Rev. Sci. Instrum. 79 2008 086105-1 086105-2
12. B. Muller, and U. Renz Rev. Sci. Instrum. 72 2001 3366 3374
13. Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, P. Vasseur, P. Desjardins, L. Hu, L.H. Allen, E.L. Gutierrez, and J.R. Viejo Thermochim. Acta 510 510 2010 126 136
14. H. Preston-Thomas Metrologia 27 1990 3 10
15. D IN IEC 751: Industrial Platinum Resistance Thermometer Sensors, 1983 edition (status as 1986).
16. S.L. Lai, J.R.A. Carlsson, and L.H. Allen Appl. Phys. Lett. 72 1998 1098 1100
17. B.W. Mangum, and G.T. Furukawa Guidelines for Realizing the International Temperature Scale of 1990 (ITS-90) Natl. Inst. Stand. Technol. Tech. Note 1265 1990
18. The actual silicon frame supporting the nitride membrane is 500 microns thick, but creates a virtually impossible geometry to mesh. Since the temperature in the silicon frame was not important to the measurements, the silicon was modeled as 1 micron thick - this is already 10 times thicker than the nitride membrane and sufficient to establish realistic temperature boundary conditions.
19. The experimental instrumentation is based on the discharge of a capacitor, so the applied voltage drops slightly during the experiment. We measure and account for the current and voltage at the sensor chip. This slight voltage drop during discharge was not accounted for in the finite element model since the goal was to understand the variation in temperature and not exactly match the experimental voltages.
20. C.H. Mastrangelo, Y. Tai, and R.S. Muller Sens. Actuators A21-A23 1990 856 860
21. N.M. Ravindra, S. Abedrabbo, W. Chen, F.M. Tong, A.K. Nanda, and A.C. Speranza IEEE Trans. Semiconduct. Manuf. 11 1998 30 39