Temperature-dependent emissivity of silicon-related materials and structures

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 1, 1998, Pages 30-39

  Ravindra, Nuggehalli M ^a,b   Abedrabbo, Sufian ^b   Chen, Wei ^b   Tong, Feiming M ^b   Nanda, Arun K ^c   Speranza, Anthony C ^c  

^a IEEE   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c SEMATECH   (United States)

Author keywords

Emissivity; Optical properties; Rapid thermal processing; Silicon; Silicon dioxide; Silicon nitride; Temperature measurement

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; LIGHT EMISSION; MATHEMATICAL MODELS; REFRACTIVE INDEX; TEMPERATURE MEASUREMENT;

KIRCHOFF LAW; SPECTRAL EMISSOMETER; SURFACE SPECTRAL EMITTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032002225     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.661282     Document Type: Article

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