SCOPUS 정보 검색 플랫폼

Volumn 11, Issue 2 SUPPL., 2011, Pages

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

(7) Biju, Kuyyadi P a Liu, Xinjun a Kim, Seonghyun a Siddik, Manzar a Shin, Jungho a Lee, Joonmyoung a Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

Multi bit operation; Resistive switching; WOx

Indexed keywords

COMPLIANCE CURRENT; CONDUCTION MECHANISM; DATA RETENTION; FAST SWITCHING; HIGH RESISTANCE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY DEVICE; MULTI-BITS; NONVOLATILE MEMORY DEVICES; OHMIC BEHAVIOR; RESET VOLTAGE; RESISTANCE CHANGE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; ROOM-TEMPERATURE PROCESS; SPACE CHARGE LIMITED CURRENTS; WOX;

ELECTRIC FIELDS; ELECTRIC RESISTANCE; NONVOLATILE STORAGE; OXYGEN VACANCIES; SWITCHING SYSTEMS;

SWITCHING;

EID: 79960929348 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2010.11.124 Document Type: Article

Times cited : (22)

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