Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2378-2380

  Charash, Ragh ^a   Kim Chauveau, Hyonju ^b   Vajpeyi, Agam ^a   Akther, Mahbub ^a   Maaskant, Pleun P ^a   Frayssinet, Eric ^b   de Mierry, Philippe ^b   Duboz, Jean Yves ^b   Corbett, Brian ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b CRHEA CNRS   (France)

Author keywords

Cladding layers; Current transport; Longer wavelength GaN laser diodes; Mode leakage

Indexed keywords

BAND DISCONTINUITIES; CLADDING LAYER; CURRENT LEAKAGE; CURRENT TRANSPORT; CURRENT-VOLTAGE MEASUREMENTS; EDGE EMITTING LASER DIODE; HETERO INTERFACES; LATTICE-MATCHED; LONGER WAVELENGTH GAN LASER DIODES; MESA STRUCTURE; MODE LEAKAGE; QUASI-LINEAR;

ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE (FLUID); TRANSPORT PROPERTIES;

DIODES;

EID: 79960719143     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001165     Document Type: Article

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