Photoluminescence dynamics of InGaN/GaN quantum wells with different in concentrations

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 325-329

  Klose, M ^a   Korona, K P ^b,c   Kuhl, J ^b   Heuken, M ^d  

^a GERMAN AEROSPACE CENTER DLR   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF WARSAW   (Poland)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229560     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<325::AID-PSSB325>3.0.CO;2-W     Document Type: Article

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