Effect of MIM and n-well capacitors on programming characteristics of EEPROM

Transactions on Electrical and Electronic Materials

Volumn 12, Issue 1, 2011, Pages 35-39

  Lee, Chan Soo ^a   Cui, Zhi Yuan ^a   Jin, Hai Feng ^a   Sung, Si Woo ^a   Lee, Hyung Gyoo ^a   Kim, Nam Soo ^a  

^a Chungbuk National University   (South Korea)

Author keywords

Electrically erasable programmable read only memory; Floating gate; Metal insulator metal capacitor; N well capacitor

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTROL GATES; ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY; FLOATING GATE; METAL INSULATOR METALS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; N-WELL CAPACITOR;

CAPACITANCE; CAPACITORS; FLASH MEMORY; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES;

MIM DEVICES;

EID: 79960685777     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2011.12.1.35     Document Type: Article

References (7)

1. D. McCarthy, R. Duane, M. O'Shea, R. Duffy, K. Mc Carthy, A. M. Kelliher, A. Concannon, and A. Mathewson, IEEE Trans. Electron Devices 50, 1708 (2003) [DOI: 10.1109/ted.2003.814988].
2. J. Raszka, M. Advani, V. Tiwari, L. Varisco, N. D. Hacobian, A. Mittal, M. Han, A. Shirdel, and A. Shubat, IEEE International Solid-State Circuits Conference (ISSCC). Digest of Technical Papers (San Francisco, CA 2004 Feb. 15-19) p. 46. [DOI: 10.1109/ ISSCC.2004.1332586].
3. C. Kuo, T. J. King, and C. Hu, IEEE Trans. Electron Devices 51, 282 (2004) [DOI: 10.1109/ted.2003.821702].
4. J. H. Oh, H. J. Chung, N. I. Lee, and C. H. Han, IEEE Electron Device Lett. 21, 304 (2000) [DOI: 10.1109/55.843158].
5. K. Y. Na and Y. S. Kim, IEEE Electron Device Lett. 27, 294 (2006) [DOI: 10.1109/led.2006.871838].
6. K. Ohsaki, N. Asamoto, and S. Takagaki, "A Single Poly EEPROM Cell Structure for Use in Standard CMOS Processes," IEEE Journal of Solid-State Circuits, vol. 29, no. 3, pp. 331-336, Mar. 1994.
7. H. C. Sung, T. F. Lei, T. H. Hsu, S. W. Wang, Y. C. Kao, Y. T. Lin, and C. S. Wang, IEEE Electron Device Lett. 26, 770 (2005) [DOI: 10.1109/led.2005.856014].