A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1708-1711

  Mc Carthy, Diarmuid ^a   Duane, Russell ^a   O'Shea, Mike ^a   Duffy, Ray ^b   Mc Carthy, Kevin ^c   Kelliher, Anne Marie ^a   Concannon, Ann ^d   Mathewson, Alan ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

CMOS compatible; Embedded; Fowler Nordheim tunneling; Nonvolatile memory device

Indexed keywords

COST EFFECTIVENESS; DATA STORAGE EQUIPMENT; TRANSISTORS;

TOP-FLOATING GATES;

CMOS INTEGRATED CIRCUITS;

EID: 0041525402     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814988     Document Type: Article

References (9)

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