Catalytic activation of Mg-doped GaN by hydrogen desorption using different metal thin layers

Japanese Journal of Applied Physics

Volumn 49, Issue 10, 2010, Pages 1002011-1002013

  Wei, Tongbo ^a   Wang, Junxi ^a   Liu, Naixin ^a   Lu, Hongxi ^a   Zeng, Yiping ^a   Wang, Guohong ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION EFFECT; ANNEALING PROCESS; BLUE EMISSION; CARRIER COMPENSATION; CATALYTIC ACTIVATION; GAN EPILAYERS; HIGH-ACTIVATION; HYDROGEN DESORPTION; MG-DOPED; PHOTOLUMINESCENCE SIGNALS; PT DEPOSITION; RED SHIFT; THIN LAYERS;

DESORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE CONCENTRATION; HYDROGEN; OHMIC CONTACTS; PLATINUM; SECONDARY BATTERIES;

MOLYBDENUM;

EID: 78650160210     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.100201     Document Type: Article

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