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Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

Mg doping and its effect on the semipolar GaN (11 2̄2) growth kinetics

(8) Lahourcade, L a Pernot, J b Wirthmuller A a Chauvat, M P c Ruterana, P c Laufer, A d Eickhoff, M d Monroy, E a

a CEA GRENOBLE (France)

b CNRS (France)

c UNIVERSITÉ DE CAEN (France)

d JUSTUS LIEBIG UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GA FILM; MG INCORPORATION; MG-DOPED; MG-DOPING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITY INVERSION; SEMIPOLAR; STRUCTURAL DEFECT;

BIOACTIVITY; CRYSTAL GROWTH; DOPING (ADDITIVES); FILM GROWTH; GALLIUM ALLOYS; GROWTH KINETICS; SEMICONDUCTING GALLIUM; SURFACE ACTIVE AGENTS;

GALLIUM NITRIDE;

EID: 70350705803 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3256189 Document Type: Article

Times cited : (22)

References (18)

1
- 0842278611
- 0163-1829 10.1103/PhysRevB.68.235214
- P. Venńgùs, M. Leroux, S. Dalmasso, M. Benaissa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies, and P. Gibart, Phys. Rev. B 0163-1829 68, 235214 (2003). 10.1103/PhysRevB.68.235214
- (2003) Phys. Rev. B , vol.68 , pp. 235214
- Venńgùs, P.¹ Leroux, M.² Dalmasso, S.³ Benaissa, M.⁴ De Mierry, P.⁵ Lorenzini, P.⁶ Damilano, B.⁷ Beaumont, B.⁸ Massies, J.⁹ Gibart, P.¹⁰

2
- 0012215250
- 3 by metal-organic chemical-vapor deposition
- DOI 10.1063/1.125568, PII S0003695199018501
- Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, D. J. H. Lambert, C. J. Eiting, and R. D. Dupuis, Appl. Phys. Lett. 0003-6951 75, 4159 (1999). 10.1063/1.125568 (Pubitemid 129709789)
- (1999) Applied Physics Letters , vol.75 , Issue.26 , pp. 4159-4161
- Liliental-Weber, Z.¹ Benamara, M.² Swider, W.³ Washburn, J.⁴ Grzegory, I.⁵ Porowski, S.⁶ Lambert, D.J.H.⁷ Eiting, C.J.⁸ Dupuis, R.D.⁹

3
- 0001287487
- 0003-6951 10.1063/1.119793
- S. Guha, N. A. Bojarczuk, and F. Cardone, Appl. Phys. Lett. 0003-6951 71, 1685 (1997). 10.1063/1.119793
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1685
- Guha, S.¹ Bojarczuk, N.A.² Cardone, F.³

4
- 0036888383
- The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy
- DOI 10.1016/S0022-0248(02)01704-9, PII S0022024802017049
- E. Haus, I. P. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, U. K. Mishra, and J. S. Speck, J. Cryst. Growth 0022-0248 246, 55 (2002). 10.1016/S0022-0248(02)01704-9 (Pubitemid 35282167)
- (2002) Journal of Crystal Growth , vol.246 , Issue.1-2 , pp. 55-63
- Haus, E.¹ Smorchkova, I.P.² Heying, B.³ Fini, P.⁴ Poblenz, C.⁵ Mates, T.⁶ Mishra, U.K.⁷ Speck, J.S.⁸

5
- 0001156355
- Magnesium incorporation in GaN grown by molecular-beam epitaxy
- DOI 10.1063/1.1339255
- A. J. Ptak, T. H. Myers, L. T. Romano, C. G. Van de Walle, and J. E. Northrup, Appl. Phys. Lett. 0003-6951 78, 285 (2001). 10.1063/1.1339255 (Pubitemid 33731955)
- (2001) Applied Physics Letters , vol.78 , Issue.3 , pp. 285-287
- Ptak, A.J.¹ Myers, T.H.² Romano, L.T.³ Van De Walle, C.G.⁴ Northrup, J.E.⁵

6
- 0001291812
- 0003-6951 10.1063/1.124520
- V. Ramachandran, R. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 0003-6951 75, 808 (1999). 10.1063/1.124520
- (1999) Appl. Phys. Lett. , vol.75 , pp. 808
- Ramachandran, V.¹ Feenstra, R.² Sarney, W.L.³ Salamanca-Riba, L.⁴ Northrup, J.E.⁵ Romano, L.T.⁶ Greve, D.W.⁷

7
- 7044249277
- 0021-8979 10.1063/1.1787142
- E. Monroy, M. Hermann, E. Sarigiannidou, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin, and M. Eickhoff, J. Appl. Phys. 0021-8979 96, 3709 (2004). 10.1063/1.1787142
- (2004) J. Appl. Phys. , vol.96 , pp. 3709
- Monroy, E.¹ Hermann, M.² Sarigiannidou, E.³ Andreev, T.⁴ Holliger, P.⁵ Monnoye, S.⁶ Mank, H.⁷ Daudin, B.⁸ Eickhoff, M.⁹

8
- 65549092701
- 0957-4484 10.1088/0957-4484/20/14/145704
- J. Arbiol, S. Estrad́, J. D. Prades, A. Cirera, F. Furtmayr, C. Stark, A. Laufer, M. Stutzmann, M. Eickhoff, M. H. Gass, A. L. Bleloch, F. Peiro, and J. R. Morante, Nanotechnology 0957-4484 20, 145704 (2009). 10.1088/0957-4484/20/14/145704
- (2009) Nanotechnology , vol.20 , pp. 145704
- Arbiol, J.¹ Estrad́, S.² Prades, J.D.³ Cirera, A.⁴ Furtmayr, F.⁵ Stark, C.⁶ Laufer, A.⁷ Stutzmann, M.⁸ Eickhoff, M.⁹ Gass, M.H.¹⁰ Bleloch, A.L.¹¹ Peiro, F.¹² Morante, J.R.¹³

9
- 2342640169
- 0003-6951 10.1063/1.1705719
- E. Monroy, T. Andreev, P. Holliger, E. Bellet-Amalric, T. Shibata, M. Tanaka, and B. Daudin, Appl. Phys. Lett. 0003-6951 84, 2554 (2004). 10.1063/1.1705719
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2554
- Monroy, E.¹ Andreev, T.² Holliger, P.³ Bellet-Amalric, E.⁴ Shibata, T.⁵ Tanaka, M.⁶ Daudin, B.⁷

10
- 17944363996
- Effect of magnesium on the structure and growth of GaN(0001)
- DOI 10.1063/1.1886257, 122108
- J. E. Northrup, Appl. Phys. Lett. 0003-6951 86, 122108 (2005). 10.1063/1.1886257 (Pubitemid 40596909)
- (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
- Northrup, J.E.¹

11
- 0001251320
- 0163-1829 10.1103/PhysRevB.59.9771
- C. Bungaro, K. Rapcewicz, and J. Bernholc, Phys. Rev. B 0163-1829 59, 9771 (1999). 10.1103/PhysRevB.59.9771
- (1999) Phys. Rev. B , vol.59 , pp. 9771
- Bungaro, C.¹ Rapcewicz, K.² Bernholc, J.³

12
- 0000397043
- 0003-6951 10.1063/1.125872
- I. P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J. P. Ibbetson, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 0003-6951 76, 718 (2000). 10.1063/1.125872
- (2000) Appl. Phys. Lett. , vol.76 , pp. 718
- Smorchkova, I.P.¹ Haus, E.² Heying, B.³ Kozodoy, P.⁴ Fini, P.⁵ Ibbetson, J.P.⁶ Keller, S.⁷ Denbaars, S.P.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

13
- 34047127399
- Plasma-assisted molecular-beam epitaxy of AlN(112 2) on m sapphire
- DOI 10.1063/1.2716375
- L. Lahourcade, E. Bellet-Amalric, E. Monroy, M. Abouzaid, and P. Ruterana, Appl. Phys. Lett. 0003-6951 90, 131909 (2007). 10.1063/1.2716375 (Pubitemid 46516853)
- (2007) Applied Physics Letters , vol.90 , Issue.13 , pp. 131909
- Lahourcade, L.¹ Bellet-Amalric, E.² Monroy, E.³ Abouzaid, M.⁴ Ruterana, P.⁵

14
- 43949124189
- Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN (11 2- 2): Effect on the structural and optical properties
- DOI 10.1063/1.2908205
- L. Lahourcade, J. Renard, B. Gayral, E. Monroy, M. P. Chauvat, and P. Ruterana, J. Appl. Phys. 0021-8979 103, 093514 (2008). 10.1063/1.2908205 (Pubitemid 351706921)
- (2008) Journal of Applied Physics , vol.103 , Issue.9 , pp. 093514
- Lahourcade, L.¹ Renard, J.² Gayral, B.³ Monroy, E.⁴ Chauvat, M.P.⁵ Ruterana, P.⁶

15
- 0034499442
- HREM study of stacking faults in GaN layers grown over sapphire substrate
- DOI 10.1088/0953-8984/12/49/332
- V. Potin, P. Ruterana, and G. Nouet, J. Phys.: Condens. Matter 0953-8984 12, 10301 (2000). 10.1088/0953-8984/12/49/332 (Pubitemid 32087335)
- (2000) Journal of Physics Condensed Matter , vol.12 , Issue.49 , pp. 10301-10306
- Potin, V.¹ Ruterana, P.² Nouet, G.³

16
- 70350715596
- note
- 0, which provides a better description of our electrical and structural data, in agreement with previous results by Kozodoy (Ref.).

17
- 0001276822
- 0021-8979 10.1063/1.372098
- P. Kozodoy, H. Xing, S. P. D. Baars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, J. Appl. Phys. 0021-8979 87, 1832 (2000). 10.1063/1.372098
- (2000) J. Appl. Phys. , vol.87 , pp. 1832
- Kozodoy, P.¹ Xing, H.² Baars, S.P.D.³ Mishra, U.K.⁴ Saxler, A.⁵ Perrin, R.⁶ Elhamri, S.⁷ Mitchel, W.C.⁸

18
- 33749348190
- Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
- DOI 10.1063/1.2338602
- M. McLaurin, T. E. Mates, F. Wu, and J. S. Speck, J. Appl. Phys. 0021-8979 100, 063707 (2006). 10.1063/1.2338602 (Pubitemid 44496121)
- (2006) Journal of Applied Physics , vol.100 , Issue.6 , pp. 063707
- McLaurin, M.¹ Mates, T.E.² Wu, F.³ Speck, J.S.⁴

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