Influence of deep level defects on the performance of crystalline silicon solar cells: Experimental and simulation study

Solar Energy Materials and Solar Cells

Volumn 95, Issue 10, 2011, Pages 2805-2810

  Ali, Adnan ^a   Gouveas, Terence ^b   Hasan, M A ^b   Zaidi, Saleem H ^c   Asghar, Muhammad ^a  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b University of North Carolina at Charlotte   (United States)

^c Gratings Incorporated   (United States)

Author keywords

AFORS HET; Deep levels defects; DLTS; Light current voltage; Silicon solar cell; Spin on doping

Indexed keywords

AFORS-HET; CELL EFFICIENCY; CRYSTALLINE SILICON SOLAR CELLS; CURRENT VOLTAGE; DEEP LEVEL; DEEP-LEVEL DEFECTS; DEFECT LEVELS; EXPERIMENTAL DATA; FILL FACTOR; P-LAYER; PHOSPHOSILICATE GLASS; SIMULATED RESULTS; SIMULATION STUDIES; SPIN-ON-DOPING;

ACTIVATION ENERGY; COMPUTER SOFTWARE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; SILICON SOLAR CELLS; SPIN GLASS;

SOLAR ENERGY;

EID: 79960557289     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.05.032     Document Type: Article

References (33)

1. R.C. Neville Solar Energy Conversion: The Solar Cell, Energy needs-Energy sources 2nd Ed. 1995 Elsevier Amsterdam pp. 138
2. A. Bentzen Phosphorous Diffusion and Gettering in Silicon Solar Cells, Ph.D. Thesis 2006 University of Oslo Amsterdam p. 1
3. A.G. Aberle Fabrication and characterization of crystalline silicon thin-film materials for solar cells Thin Solid Films 511 2006 26 34 (Pubitemid 44250863)
4. D.H. Neuhaus, and A. Münzer Industrial silicon wafer solar cells Advances in OptoElectronics 2007 1 15 Article ID 24521
5. J.Y. Lee Rapid Thermal Processing of Silicon Solar Cells - Passivation and Diffusion, Ph.D. Thesis 2003 Fraunhofer Institut fur Solare Energiesysteme (ISE) Amsterdam p. 1
6. M.A. Green Crystalline silicon photovoltaic cells Advanced Materials 13 2001 1019 1022 (Pubitemid 32651055)
7. F. Aratani The present status and future direction of technology development for photovoltaic power generation in Japan Progress in Photovoltaics: Research and Applications 13 2005 463 470
8. K. Nakayashiki, Understanding of Defect Passivation and its Effect on Multi-crystalline Silicon Solar Cell Performance, Ph.D. Thesis, Georgia Institute of Technology, GA, USA, 2007, p. 3.
9. A. Goetzberger, C. Hebling, and H.W. Schock Photovoltaic materials, history, status and outlook Material Science Engineering R 40 2003 1 46
10. M.L. Kuo, D.J. Poxson, Y.S. Kim, F.W. Mont, J.K. Kim, E.F. Schubert, and S.Y. Lin Realization of near-perfect antireflection coating for silicon solar energy Optics Letters 33 2008 2527 2529
11. H. Hamadeh, and R. Darwich DLTS properties of iron defects in crystalline silicon used in solar cells Material Science Engineering B 113 2004 166 169
12. J. Adey, R. Jones, D.W. Palmer, P.R. Briddon, and S. Öberg Degradation of boron-doped Czochralski-grown silicon solar cells Physical Review Letters 93 2004 055504 055508
13. H.S. Reehal, M.P. Lesniak, and A.E. Hughes Application of DLTS to silicon solar cell processing Journal of Physics D: Applied Physics 29 1996 934 938 (Pubitemid 126548289)
14. D.V. Lang Deep-level transient spectroscopy: a new method to characterize traps in semiconductors Journal of Applied Physics 45 1974 3023 3032
15. A. Froitzheim, R. Stangl, L. Elstner, M. Kriegel, W. Fuhs, AFORS-HET: a computer-program for the simulation of heterojunction solar cells to be distributed for public use, in: Proceedings of Third World Conference on Photovoltaic Energy Conversion, IEEE, Osaka, Japan, B 2003, pp. 279282.
16. D.K. Schroder Semiconductor Material and Device Characterization, Defects 3rd Ed. 2006 Wiley NewYork (p. 262)
17. D.V. Lang Thermally Stimulated Relaxation in Solids, Space-charge spectroscopy in semiconductors, vol. 37 1979 Springer NewYork (p. 113)
18. A.G.M. Das, C. Nyamhere, F.D. Auret, and M. Hayes A comparative study of electronic properties of the defects introduced in p-Si: (i) during electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation Surface and Coatings Technology 203 2009 2628 2631
19. M. Asghar, M. Zafar Iqbal, and N. Zafar Study of alpha-radiation-induced deep levels in p-type silicon Journal of Applied Physics 73 1993 4240 4247
20. P.K. Giri, and Y.N. Mohapatra Thermal stability of defect complexes due to high dose MeV implantation in silicon Material Science Engineering B 71 2000 327 332 (Pubitemid 30552250)
21. P.J. Ribeyron, and F. Durand Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes Journal of Crystal Growth 210 2000 541 553 (Pubitemid 30567742)
22. A.R. Peaker, J.H. Evans-Freeman, P.Y.Y. Kan, I.D. Hawkins, J. Terry, C. Jeynes, and L. Rubaldo Vacancy-related defects in ion implanted and electron irradiated silicon Material Science Engineering B 71 2000 143 147 (Pubitemid 30552215)
23. Vikash Dubey, and Shyam Singh Role of oxygen and carbon on donor formation in step-annealed CZ-silicon Journal of Physics and Chemistry of Solids 65 2004 1265 1269
24. J.D. Gerson, L.J. Cheng, and J.W. Corbett A quenched-in defect in boron-doped silicon Journal of Applied Physics 48 1977 4821 4822
25. M. Mamor, M. Willander, F.D. Auret, W. Meyer, and E. Sveinbjornsson Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si Physical Review B 63 2000 045201 045205
26. F. Volpi, A.R. Peaker, I. Berbezier, and A. Ronda Electrically active defects induced by sputtering deposition on silicon: the role of hydrogen Journal of Applied Physics 95 1994 4752 4760
27. J. Schmidt, A.G. Aberle, R. Hezel, Investigation of carrier lifetime instabilities in Czochralski silicon, in: Proceedings of 26th IEEE PVSC, IEEE, Anaheim, California, USA, vol. 26, 1997, pp. 1318.
28. J. Schmidt, and A. Cuevas Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon Journal of Applied Physics 86 1999 3175 3180 (Pubitemid 129648249)
29. P.M. Mooney, L.J. Cheng, M. Suüli, J.D. Gerson, and J.W. Corbett Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons Physical Review B 15 1977 3836 3843
30. B. Pivac, I. Kovačević, and V. Borjanović Defects in carbon and oxygen implanted p-type silicon Nuclear Instruments and Methods in Physics Research B 186 2002 355 359 (Pubitemid 34019101)
31. M. Trushin, O. Vyvenko, W. Seifert, G. Jia, and M. Kittler Ironoxygen interaction in silicon: a combined XBIC/XRF-EBIC-DLTS study of precipitation and complex building Physica B 404 2009 4645 4648
32. D. Abdelbarey, V. Kveder, W. Schröter, and M. Seibt Light induced point defects reactions of residual iron in crystalline silicon after aluminum gettering Journal of Applied Physics 108 2010 043519 043524
33. I. Capan, V. Borjanovic, and B. Pivac Dislocation-related deep levels in carbon rich p-type polycrystalline silicon Solar Energy Materials and Solar Cells 91 2007 931 937 (Pubitemid 46561267)