Dislocation-related deep levels in carbon rich p-type polycrystalline silicon

Solar Energy Materials and Solar Cells

Volumn 91, Issue 10, 2007, Pages 931-937

  Capan, I ^a   Borjanovic V ^b   Pivac, B ^a  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b UNIVERSITY OF ZAGREB   (Croatia)

Author keywords

Carbon; Deep level transient spectrospcopy; Dislocations; Impurities; Polycrystalline silicon; Solar cells

Indexed keywords

BORON; CARBON; ELECTRIC PROPERTIES; IMPURITIES; POLYSILICON; SEMICONDUCTOR DOPING; SOLAR CELLS;

DEEP-LEVEL TRANSIENT SPECTROSPCOPY; LOGARITHMIC CAPTURE KINETICS;

DISLOCATIONS (CRYSTALS);

EID: 34147116676     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.02.011     Document Type: Article

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