Room temperature SiO2 wafer bonding by adhesion layer method

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 2165-2170

  Kondou, Ryuichi ^a   Suga, Tadatomo ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; BONDED WAFERS; BONDING ENERGIES; BONDING INTERFACES; BONDING STRENGTH; FE-DOPED; INTERMEDIATE LAYERS; ION BEAM TREATMENT; RADIO FREQUENCY GLOW DISCHARGE; ROOM TEMPERATURE; SI LAYER; WAFER BONDING METHODS; WAFER SURFACE;

ADHESION; AMORPHOUS SILICON; BONDING; DIFFUSION BONDING; ELECTRON ENERGY LOSS SPECTROSCOPY; GLOW DISCHARGES; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; PHOTOELECTRON SPECTROSCOPY; RADIO BROADCASTING; RADIO TRANSMISSION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; SPECTROMETERS; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

WAFER BONDING;

EID: 79960435129     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898819     Document Type: Conference Paper

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