A novel bonding method for ionic wafers

IEEE Transactions on Advanced Packaging

Volumn 30, Issue 4, 2007, Pages 598-604

  Howlader, M M R ^a   Suga, Tadatomo ^b   Kim, Moon J ^c  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF TOKYO   (Japan)

^c The University of Texas at Dallas   (United States)

Author keywords

Auger electron spectroscopy; Bonding; Charge decomposition; Depolarization; Electron energy loss spectroscopy (EELS) and bonding strength; Ionic wafers; Lattice mismatch; Modified hollow cathode ion source; Polarization; Surface activated bonding

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ION BEAMS; IRRADIATION; LATTICE MISMATCH; LITHIUM COMPOUNDS; QUARTZ; SAPPHIRE; SEMICONDUCTING GLASS; SILICON WAFERS; TENSILE STRENGTH;

BONDING STRENGTH; CHARGE DECOMPOSITION; ION BEAM IRRADIATION; IONIC WAFERS; SURFACE ACTIVATED BONDING;

WAFER BONDING;

EID: 36349034082     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2007.906394     Document Type: Article

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