Room-temperature bonding of Si wafers to Pt films on SiO2 or LiNbO3 substrates using Ar-beam surface activation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Takagi, Hideki ^a   Maeda, Ryutaro ^a   Hosoda, Naoe ^a,b   Suga, Tadatomo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (MATERIALS); BONDING; CRYSTAL IMPURITIES; LITHIUM NIOBATE; METALLIC FILMS; PLATINUM; SILICA; SUBSTRATES; SURFACE TREATMENT;

SURFACE ACTIVATION;

SILICON WAFERS;

EID: 0033316412     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1559     Document Type: Article

References (27)