Advantages of point of use (POU) slurry filter and high spray method for reduction of CMP process defects

Microelectronic Engineering

Volumn 70, Issue 1, 2003, Pages 1-6

  Seo, Yong Jin ^a   Kim, Sang Yong ^b   Lee, Woo Sun ^c  

^a Daebul University   (South Korea)

^b DongbuAnam Semiconductor Inc   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); De ionized water (DIW); High spray bar; Inter metal dielectric (IMD); Point of use (POU)

Indexed keywords

AGGLOMERATION; CHEMICAL MECHANICAL POLISHING; DIELECTRIC MATERIALS; IONIZATION; PARTICLE SIZE ANALYSIS; SLURRIES;

FREE-DEFECTS;

MICROELECTRONIC PROCESSING;

EID: 0141531990     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00278-8     Document Type: Article

References (8)

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