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Physica B: Condensed Matter

Volumn 406, Issue 18, 2011, Pages 3479-3483

Fabrication and photoluminescence of P doped ZnO nanobelts by thermal evaporation method

(8) Zang, C Y a Zang, C H b Wang, B c Jia, Z X a Yue, S R b Li, Y S b Yang, H Q b Zhang, Y S b

a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b LUOYANG INSTITUTE OF SCIENCE AND TECHNOLOGY (China)

c CHINESE ACADEMY OF SCIENCES (China)

Author keywords

Growth mechanism; Nanostructure; Photoluminescence; ZnO:P

Indexed keywords

ACCEPTOR-BOUND EXCITONS; ACTIVE ENERGY; BOUND EXCITON; GROWTH MECHANISMS; GROWTH PROCESS; P-DOPED ZNO; PHOTOLUMINESCENCE PROPERTIES; PL SPECTRA; SI(1 0 0); TEMPERATURE RANGE; THERMAL EVAPORATION METHOD; THERMODYNAMICS AND KINETICS; VAPOR SOLID MECHANISM; ZNO;

BINDING ENERGY; EXCITONS; GROWTH KINETICS; NANOBELTS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SINGLE CRYSTALS; THERMODYNAMICS; ZINC; ZINC OXIDE;

THERMAL EVAPORATION;

EID: 79960151525 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.06.030 Document Type: Article

Times cited : (7)

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