Behavior of basal plane dislocations and low angle grain boundary formation in hexagonal silicon carbide

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 231-234

  Chen, Yi ^a   Dhanaraj, Govindhan ^a   Vetter, William ^a   Ma, Rong Hui ^b   Dudley, Michael ^a  

^a Stony Brook University   (United States)

^b Baltimore County   (United States)

Author keywords

Basal plane dislocation; Dislocation dipole; Low angle grain boundary

Indexed keywords

EDGE DISLOCATIONS; GRAIN BOUNDARIES; SCREWS; TOPOGRAPHY;

BASAL PLANE DISLOCATION (BPDS); BASAL PLANE DISLOCATIONS; DISLOCATION DIPOLE; LOW ANGLE GRAIN BOUNDARIES; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHIES; THREADING SCREW; THREEDIMENSIONAL (3-D); TRAILING DISLOCATIONS;

SILICON CARBIDE;

EID: 38449108432     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.231     Document Type: Conference Paper

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