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Volumn 113, Issue 22, 2009, Pages 9516-9519

Atomistic origin and pressure dependence of band gap variation in semiconductor nanocrystals

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL SOLUTIONS; BAND GAP ENERGY; BAND GAP VARIATION; BOND CONTRACTION; BOND ORDERS; EXPERIMENTAL MEASUREMENTS; JOINT EFFECT; POTENTIAL VARIATIONS; PRESSURE DEPENDENCE; PRESSURE DOMAIN; SEMICONDUCTOR NANOCRYSTALS; SINGLE BOND; THEORETICAL RESULT;

EID: 67149116648     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9035309     Document Type: Article
Times cited : (46)

References (46)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.