Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Yao, Donglai ^a   Zhang, Gang ^b   Lo, Guo Qiang ^b   Li, Baowen ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRONIC STRUCTURE; HYDROGEN; LATTICE CONSTANTS; NANOWIRES; PASSIVATION;

CROSS-SECTIONAL AREAS; CROSS-SECTIONAL SHAPES; ELECTRON EFFECTIVE MASS; FIRST-PRINCIPLES; ON CURRENTS; QUANTUM CONFINEMENT EFFECTS; SILICON NANOWIRES; SIZE DEPENDENCES; SURFACE LATTICES; SURFACE-TO-VOLUME RATIOS; TIGHT-BINDING METHODS;

SURFACE STRUCTURE;

EID: 63049097615     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103366     Document Type: Article

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