Dislocation-induced electronic levels in semi-insulated CdTe

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 633, Issue SUPPL. 1, 2011, Pages

  Babentsov, V ^a   Boiko, V ^a   Schepelskii, G A ^a   James, R B ^b   Franc, J ^c   Prochazka J ^c   Hlidek P ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CHARLES UNIVERSITY   (Czech Republic)

Author keywords

CdTe; Detectors; Dislocations

Indexed keywords

CDTE; CHARGE COLLECTION; DETECTOR TECHNOLOGY; DISLOCATION DENSITIES; ELECTRONIC LEVELS; ETCH PIT DENSITY; INDENTERS; INFRARED PHOTOLUMINESCENCE; SEMI-INSULATING;

CADMIUM COMPOUNDS; DEFECTS; DEFORMATION; RADIATION DETECTORS;

CADMIUM ALLOYS;

EID: 79959849706     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.06.129     Document Type: Conference Paper

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