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Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4053-4055

Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb

(4) Khattak, G M a Matthews, G W a Scott, C G a Yousaf, M a

a UNIVERSITY OF HULL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEGRADATION; DISLOCATIONS (CRYSTALS); ELECTRIC CHARGE; ELECTRIC PROPERTIES; ELECTRON TRAPS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RATE; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTOR-INSULATOR TRANSITION; STRAIN RELAXATION; SUBSTRATE SURFACES;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 2942592811 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1751615 Document Type: Article

Times cited : (2)

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