Study of the effect of dislocations introduced by indentation on Cd(1 1 1) and Te(1̄ 1̄ 1̄) faces on the electrical and optical properties of CdTe

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 709-715

  Guergouri, K ^a   Brihi, N ^a   Triboulet, R ^b  

^a Universite Mentouri Constantine   (Algeria)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; ENERGY GAP; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

MICROINDENTATION; POLARITY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033904497     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00627-2     Document Type: Article

References (20)

1. K. Zanio, Semiconductors and Semimetals-cadmium Tellured, Vol. 13, Academic Press, New York, 1978.
2. Guergouri K., Marfaing Y., Triboulet R., Tromson-Carli A. Rev. Phys. Appl. 25:1990;481.
3. Triboulet R., Marfaing Y. J. Electrochem. Soc. 120:1973;1260.
4. Inoue M., Teramoto I., Tagayanagi S. J. Appl. Phys. 33:1962;2578.
5. Gutmanas E.Y., Travitzky N., Plitt U., Haasen Scr. Metall. 13:1979;293.
6. Dharmadasa I.M., Thornton J.M., Williams R.H. Appl. Phys. Lett. 54:1989;137.
7. Rivière A., Sieber B., Rivière J.P. Microsc. Microanal. Microstruct. 2:1991;1.
8. Waldrop J.R. J. Vac. Sci. Technol. B. 2:1984;443.
9. Fissel A., Shenk A. J. Mater. Sci. 3:1992;147.
10. Hirth J.P., Lothe J. Theory of Dislocations. 1968;McGraw-Hill, New York.
11. Petrenko V.F., Whitwhort R.W. Phil. Mag. A. 41:1980;681.
12. Dharmadasa I.M., Thornton J.M., Williams R.H. Appl. Phys. Lett. 54:1988;137.
13. Forsyth N.M., Dharmadasa I.M., Sobierierski Z., Williams R.H. Vaccum. 38:1988;369.
14. Sobiesierski Z., Dharmadasa I.M., Williams R.H. Appl. Phys. Lett. 53:1988;2623.
15. E. H. Rhodrick, Metal Semiconductor Contacts, Clarendon Press, Oxford, 1980, p. 104.
16. Aspnes D.E., Arvin A. J. Vac. Sci. Technol. A. 2:1984;1309.
17. Haring J.P., G Werthen J., Bube R.H., Gulbrandsen L., Jansen W., Luscher P. J. Vac. Sci. Technol. B. 4:1986;1330.
18. Dharmadasa I.M., Maclean A.B., Patterson M.H., Williams R.H. Semicond. Sci. Technol. 2:1987;404.
19. Braun C., Helbert H.W., George A. Phil. Mag. A. 53:1986;277.
20. Forsyth N.M., Dharmadasa I.M., Patterson M.H., Aami C.M. Surf. Sci. 168:1986;323.