SCOPUS 정보 검색 플랫폼

Volumn 216, Issue 1, 2000, Pages 127-133

Study of the effect of polarity and of dislocations on the electrical and optoelectronic properties of p-type Cd0.96Zn0.04Te

(3) Guergouri, K a Teyar, E a Triboulet, R b

a Universite Mentouri Constantine (Algeria)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); LEAKAGE CURRENTS; MICROHARDNESS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; PLASTIC DEFORMATION; SEMICONDUCTOR GROWTH; VICKERS HARDNESS TESTING;

BRIDGMAN METHOD; CADMIUM ZINC TELLURIDE; POLARITY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033723736 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00452-8 Document Type: Article

Times cited : (9)

References (16)

1
- 0009663737
- Sudharsanan R., Parnham K.B., Karam N.H. Laser Focus World. 32(6):1996;199.
- (1996) Laser Focus World , vol.32 , Issue.6 , pp. 199
- Sudharsanan, R.¹ Parnham, K.B.² Karam, N.H.³

2
- 0343200631
- August
- K. Kinkade, Laser Focus World, August 1997, p. 26.
- (1997) Laser Focus World , pp. 26
- Kinkade, K.¹

3
- 85031560740
- Thèse de Doctorat de l'Université de Paris VI
- K. Guergouri, Thèse de Doctorat de l'Université de Paris VI, 1987.
- (1987)
- Guergouri, K.¹

4
- 0025412822
- Cheuvart P., El-Hanani U., Schneider D., Triboulet R. J. Crystal Growth. 101:1990;270.
- (1990) J. Crystal Growth , vol.101 , pp. 270
- Cheuvart, P.¹ El-Hanani, U.² Schneider, D.³ Triboulet, R.⁴

5
- 36849135352
- Inoue M., Teramoto I., Takayanagi S. J. Appl. Phys. 33:1962;2578.
- (1962) J. Appl. Phys. , vol.33 , pp. 2578
- Inoue, M.¹ Teramoto, I.² Takayanagi, S.³

6
- 85031557349
- Thèse de Doctorat ES Sciences Physiques de l'Université de Paris VI
- B. Sieber, Thèse de Doctorat ES Sciences Physiques de l'Université de Paris VI, 1985.
- (1985)
- Sieber, B.¹

7
- 85031564732
- Rapport d'Activité. Université de Constantine
- T. Kerbache, A. Chari, T. Benchaker, Rapport d'Activité. Université de Constantine, 1996.
- (1996)
- Kerbache, T.¹ Chari, A.² Benchaker, T.³

8
- 0020905029
- Janik E., Triboulet R. J. Phys D: Appl. Phys. 16:1983;2333.
- (1983) J. Phys D: Appl. Phys. , vol.16 , pp. 2333
- Janik, E.¹ Triboulet, R.²

9
- 0342843214
- Patterson M.H., Williams R.H J. Crystal Growth. 59:1982;281.
- (1982) J. Crystal Growth , vol.59 , pp. 281
- Patterson, M.H.¹ Williams, R.H.²

10
- 0004005306
- Wiley, New York
- S.M. Sze, Physics of Semiconductors Devices, 2nd edition, Wiley, New York, 1981.
- (1981) Physics of Semiconductors Devices, 2nd Edition
- Sze, S.M.¹

11
- 0342695013
- Walchop J.R. J. Vac. Sci. Technol. B. 2:1984;443.
- (1984) J. Vac. Sci. Technol. B , vol.2 , pp. 443
- Walchop, J.R.¹

12
- 0022762812
- Mclean A.B., Dharmadasa I.M., Williams R.H. Semicond. Sci. Technol. 1:1986;137.
- (1986) Semicond. Sci. Technol. , vol.1 , pp. 137
- Mclean, A.B.¹ Dharmadasa, I.M.² Williams, R.H.³

13
- 0004240297
- Masson, Paris
- H. Mathieu, Physique des Semi-conducteurs et des Composants Électroniques, Masson, Paris, 1987.
- (1987) Physique des Semi-conducteurs et des Composants Électroniques
- Mathieu, H.¹

14
- 0003992521
- In: R.K Willardson, C. Beer (Eds.) Academic Press, New York
- K. Zanio, In: R.K Willardson, C. Beer (Eds.) Semiconductors and Semi-metals, Academic Press, New York, 1978.
- (1978) Semiconductors and Semi-metals
- Zanio, K.¹

15
- 0001662912
- Weisberg L.R. J. Appl. Phys. 33:1962;1817.
- (1962) J. Appl. Phys. , vol.33 , pp. 1817
- Weisberg, L.R.¹

16
- 0343565215
- Guergouri K., Marfaing Y., Triboulet R., Tromson-Carli A. Rev. Phys. Appl. 25:1990;481.
- (1990) Rev. Phys. Appl. , vol.25 , pp. 481
- Guergouri, K.¹ Marfaing, Y.² Triboulet, R.³ Tromson-Carli, A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.