One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II-VI semiconductor crystals

Semiconductors

Volumn 32, Issue 6, 1998, Pages 580-586

  Tarbaev, N I ^a   Shepel'skii G A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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EID: 0345982317     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187442     Document Type: Article

References (26)

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