Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

Materials Science and Engineering: A

Volumn 432, Issue 1-2, 2006, Pages 126-128

  Zha, Gangqiang ^a   Jie, Wanqi ^a   Tan, Tingting ^a   Wang, Linghang ^a   Zeng, Dongmei ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

CdZnTe; Dislocations; IR transmittance; PL

Indexed keywords

BENDING (DEFORMATION); DISLOCATIONS (CRYSTALS); ELECTRON ABSORPTION; INFRARED TRANSMISSION; LIGHT POLARIZATION; PHONONS; PHOTOLUMINESCENCE;

DANGLING-BOND ELECTRONS; OPTICAL PHONON REPLICA;

CADMIUM ALLOYS;

BENDING (DEFORMATION); CADMIUM ALLOYS; DISLOCATIONS (CRYSTALS); ELECTRON ABSORPTION; INFRARED TRANSMISSION; LIGHT POLARIZATION; PHONONS; PHOTOLUMINESCENCE;

EID: 33747788351     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.06.079     Document Type: Article

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