High gain and fast detection of warfare agents using back-gated silicon-nanowired MOSFETs

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 976-978

  Passi, Vikram ^a   Ravaux, Florent ^a   Dubois, Emmanuel ^a   Clavaguera, Simon ^b   Carella, Alexandre ^b   Celle, Caroline ^b   Simonato, Jean Pierre ^b   Silvestri, Luca ^c   Reggiani, Susanna ^c   Vuillaume, Dominique ^a   Raskin, Jean Pierre ^d  

^a UNIV LILLE   (France)

^b Laboratory of Innovation for New Energy Technologies and Nanomaterials   (France)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Gas detection; metaloxidesemiconductor field effect transistors (MOSFETs); silicon nanowires (NWs); silicon surface functionalization

Indexed keywords

CURRENT GAINS; GAIN INSIGHT; GAS DETECTION; HIGH GAIN; MOSFETS; NANORIBBONS; ORGANOPHOSPHOROUS; P-TYPE; PHYSICAL MECHANISM; SENSOR SENSITIVITY; SILICON NANOWIRES (NWS); SILICON SURFACE FUNCTIONALIZATION; STATIC AND DYNAMIC; SURFACE FUNCTIONALIZATION; SURFACE-TO-VOLUME RATIO; TOP-DOWN FABRICATION; WARFARE AGENTS;

COMPUTER SIMULATION; GAS DETECTORS; METHANOL; MOSFET DEVICES; NANOWIRES; SILICON DETECTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959796648     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2146750     Document Type: Article

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