GaInNAsSb/GaAs photodiodes for long-wavelength applications

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 919-921

  Tan, Siew Li ^a   Zhang, Shiyong ^a   Soong, Wai Mun ^a,b   Goh, Yu Ling ^a   Tan, Lionel J J ^a,c   Ng, Jo Shien ^a   David, John P R ^a   Marko, Igor P ^d   Adams, Alfred R ^d   Sweeney, Stephen J ^d   Allam, Jeremy ^d  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b TECHNOLOGY PARK MALAYSIA   (Malaysia)

^c Indira Gandhi Centre for Atomic Research   (India)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Absorption coefficient; dark current; dilute nitride; InGaAsN; InGaAsNSb; photodetectors; quantum efficiency (QE); responsivity

Indexed keywords

ABSORPTION COEFFICIENTS; DILUTE NITRIDES; INGAASN; INGAASNSB; RESPONSIVITY;

ABSORPTION; DARK CURRENTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GERMANIUM; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

PHOTODIODES;

EID: 79959775847     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2145351     Document Type: Article

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