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Journal of Alloys and Compounds

Volumn 509, Issue 30, 2011, Pages 7922-7926

Thermoelectric properties of Sc- and Y-doped Mg2Si prepared by field-activated and pressure-assisted reactive sintering

(4) Meng, Q S a Fan, W H a Chen, R X a Munir, Z A b

a TAIYUAN UNIVERSITY OF TECHNOLOGY (China)

b University of California Davis (United States)

Author keywords

FAPAS; Mg2Si; Rare earth element doping; Reactive sintering; Thermoelectric material

Indexed keywords

AVERAGE GRAIN SIZE; FAPAS; N-TYPE SEMICONDUCTORS; POWER FACTORS; PURE MG; RARE EARTH ELEMENT DOPING; REACTIVE SINTERING; TEMPERATURE RANGE; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; Y-DOPED;

ELECTRIC POWER FACTOR; RARE EARTH ELEMENTS; SEMICONDUCTOR DOPING; SILICIDES; SILICON; SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

SEMICONDUCTING SILICON;

EID: 79959749305 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.05.033 Document Type: Article

Times cited : (45)

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