First-principles and experimental studies of Y-doped Mg 2Si prepared using field-activated pressure-assisted synthesis

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 1209-1214

  Fan, Wenhao ^a   Chen, Ruixue ^a   Wang, Liqi ^a   Han, Peide ^a   Meng, Qingsen ^a  

^a TAIYUAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

electronic structure; field activated pressure assisted synthesis; Mg 2Si; reactive sintering; thermoelectric material; Y

Indexed keywords

FIELD-ACTIVATED PRESSURE-ASSISTED SYNTHESIS; MG 2SI; REACTIVE SINTERING; THERMOELECTRIC MATERIAL; Y;

CALCULATIONS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; ELECTRONIC STRUCTURE; SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

SILICON;

EID: 79955885080     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1601-5     Document Type: Conference Paper

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