Thermoelectric properties of Al-doped Mg2Si1-xSnx (x ≦ 0.1)

Journal of Alloys and Compounds

Volumn 466, Issue 1-2, 2008, Pages 335-340

  Tani, Jun ichi ^a   Kido, Hiroyasu ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Electrical transport; Impurities in semiconductors; Intermetallics; Thermoelectric materials

Indexed keywords

MAGNESIUM PRINTING PLATES; THERMOELECTRIC EQUIPMENT;

ELECTRICAL TRANSPORT; IMPURITIES IN SEMICONDUCTORS; INTERMETALLICS; THERMOELECTRIC MATERIALS;

ALUMINUM;

ALUMINUM; ALUMINUM COMPOUNDS; CONCENTRATION; ELECTRICITY; ELECTRONS; MAGNESIUM CARBONATE; MAGNESIUM COMPOUNDS; PRINTING PLATES; RESISTIVITY; SEMICONDUCTOR DEVICES; SINTERING; TEMPERATURE CONTROL; THERMAL CONDUCTIVITY; THERMAL PROPERTIES;

EID: 50649118800     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.11.029     Document Type: Article

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