Thermoelectric properties of Sb-doped Mg 2Si 0.3Sn 0.7

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 1062-1066

  Liu, Wei ^a   Zhang, Qiang ^a   Tang, Xinfeng ^a   Li, Han ^a   Sharp, Jeff ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b Marlow Industries Inc   (United States)

Author keywords

Mg 2Si 0.3Sn 0.7; Sb doping; solid state reaction; thermoelectric properties

Indexed keywords

DEFECT SCATTERING; ELECTRICAL CONDUCTIVITY; ELECTRON CONCENTRATION; LATTICE THERMAL CONDUCTIVITY; MG 2SI 0.3SN 0.7; NON-DOPED; POWER FACTORS; SB DOPING; SB-DOPED; SIGNIFICANT IMPACTS; SOLID STATE REACTION METHOD; TEMPERATURE RANGE; THERMOELECTRIC PROPERTIES;

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POWER FACTOR; POINT DEFECTS; SILICON; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN;

ANTIMONY COMPOUNDS;

EID: 79955911847     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1541-0     Document Type: Conference Paper

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