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Advanced Materials Research

Volumn 66, Issue , 2009, Pages 33-36

Effect of bi doping on the thermoelectric properties of Mg 2Si0.5Sn0.5 compound

(5) Luo, W J a Yang, M J a Shen, Q a Jiang, H Y a Zhang, L M a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Bi doping; Mg2Si0.5Sn0.5; Solid state reaction; Spark plasma sintering (SPS); Thermoelectric properties

Indexed keywords

BI-DOPED; BI-DOPING; CRYSTAL DISTORTION; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; FIGURE OF MERIT; MAXIMUM VALUES; MEASURING TEMPERATURE; MG2SI0.5SN0.5; SINGLE PHASE; SPARK PLASMA SINTERING (SPS); THERMOELECTRIC PROPERTIES;

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRIC SPARKS; PLASMAS; SILICON; SOLID STATE REACTIONS; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; TIN;

DOPING (ADDITIVES);

EID: 70350144903 PISSN: 10226680 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/AMR.66.33 Document Type: Conference Paper

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.