Strong interface p-doping and band bending in C60 on MoO x

Organic Electronics

Volumn 12, Issue 9, 2011, Pages 1588-1593

  Irfan, ^a   Zhang, Minlu ^b   Ding, Huanjun ^a   Tang, Ching W ^a,b   Gao, Yongli ^a,c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b University of Rochester   (United States)

^c CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

Doped fullerene; Electronic structure; Inverse photoemission spectroscopy; Inversion; Organic photovoltaic; Ultraviolet photoemission spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC STRUCTURE; FULLERENES; INDIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; TIN OXIDES;

DOPED FULLERENE; INVERSE PHOTOEMISSION SPECTROSCOPY; INVERSION; ORGANIC PHOTOVOLTAICS; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

MOLYBDENUM OXIDE;

EID: 79959704443     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.06.007     Document Type: Article

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