Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Zhang, Zhen ^a   Yang, Bin ^a   Zhu, Yu ^a   Gaudet, Simon ^b   Rossnagel, Steve ^a   Kellock, Andrew J ^c   Ozcan, Ahmet ^d   Murray, Conal ^a   Desjardins, Patrick ^b   Zhang, Shi Li ^e   Jordan Sweet, Jean ^a   Lavoie, Christian ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d IBM MICROELECTRONICS   (United States)

^e UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC STRUCTURE; METAL FILM; METAL THICKNESS; MORPHOLOGICAL STABILITY; PROCESS SCHEMES; SELF-LIMITING PROCESS; SI (100) SUBSTRATE; SILICIDATION; SILICIDE FILMS; SUBSTRATE SURFACE; ULTRA-THIN; WET CHEMICALS;

METALS; PLATINUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICIDES;

ULTRATHIN FILMS;

EID: 78650726526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3529459     Document Type: Article

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