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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

Device characterization of correlated electron random access memories

(4) McWilliams, Christopher R a Celinska, Jolanta a Paz De Araujo, Carlos A a,b Xue, Kan Hao b

a Symetrix Corporation (United States)

b University of Colorado at Colorado Springs (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATED ELECTRONS; DEVICE CHARACTERIZATION; ELEVATED TEMPERATURE; HIGH DENSITY MEMORY; HIGH TEMPERATURE; NON-VOLATILE DATA; OPERATING RANGES; RANDOM ACCESS MEMORIES; SWITCHING PARAMETERS; SWITCHING PROPERTIES; TRANSITION-METAL OXIDES;

ELECTROFORMING; OPTIMIZATION; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79959512355 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3581206 Document Type: Conference Paper

Times cited : (14)

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