Scaleable single-photon avalanche diode structures in nanometer CMOS technology

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 2028-2035

  Richardson, Justin A ^a   Webster, Eric A G ^b   Grant, Lindsay A ^c   Henderson, Robert K ^b  

^a DIALOG SEMICONDUCTOR   (Germany)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c STMicroelectronics Ltd Bristol   (United Kingdom)

Author keywords

Biomedical imaging; complementary metaloxidesemiconductor (CMOS) integrated circuits; image sensors; p n junctions; photodetectors; photodiodes

Indexed keywords

BIOMEDICAL IMAGING; CMOS IMAGE SENSOR; COMPLEMENTARY METALOXIDESEMICONDUCTOR (CMOS) INTEGRATED CIRCUITS; DARK COUNT RATE; DEVICE STRUCTURES; DIGITAL CMOS; GEIGER MODES; GUARD-RINGS; HIGH RESOLUTION; NANO-METER-SCALE; NANOMETER CMOS; OPTICAL SENSITIVITY; P-N JUNCTION; SCALEABLE; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON AVALANCHE PHOTODIODES; TIME RESOLUTION; TRIPLE WELL;

IMAGE SENSORS; JITTER; MEDICAL IMAGING; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTODIODES; PHOTONS; SEMICONDUCTOR JUNCTIONS; SENSORS;

CMOS INTEGRATED CIRCUITS;

EID: 79959495573     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2141138     Document Type: Article

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