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Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Temperature dependence of weak localization effects of excitons in ZnCdO/ZnO single quantum well

(6) Yang, W F a Chen, R a Liu, B a Wong, L M b Wang, S J b Sun, H D a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

C-SAPPHIRE; CARRIER LOCALIZATION EFFECTS; INTERFACE BARRIER; PL INTENSITY; S-SHAPED; SINGLE QUANTUM WELL; SMOOTH INTERFACE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; WEAK LOCALIZATION EFFECTS; ZNO;

OPTICAL PROPERTIES; PULSED LASER DEPOSITION; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79959466790 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3592887 Document Type: Article

Times cited : (25)

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