High quality factor nitride-based optical cavities: Microdisks with embedded GaN/Al(Ga)N quantum dots

Optics Letters

Volumn 36, Issue 12, 2011, Pages 2203-2205

  Mexis, M ^a   Sergent, S ^b,c   Guillet, T ^a   Brimont, C ^a   Bretagnon, T ^a   Gil, B ^a   Semond, F ^b   Leroux, M ^b   Neel D ^d   David, S ^d   Checoury X ^d   Boucaud, P ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

^c UNIVERSITÉ CÔTE D'AZUR   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN BARRIERS; BARRIER LAYERS; CAVITY LOSS; ETCHING QUALITY; EXPERIMENTAL INVESTIGATIONS; GAN QUANTUM DOTS; HIGH Q FACTOR; HIGH QUALITY FACTORS; MICRODISKS; OPTICAL CAVITIES; PL MEASUREMENTS; Q-FACTORS; Q-VALUES; QUALITY FACTORS; RADIAL MODE; RESONANT MODE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; WHISPERING GALLERY MODES;

GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; Q FACTOR MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79959384393     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.36.002203     Document Type: Article

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