GaN quantum dots in (Al,Ga)N-based Microdisks

Journal of Physics: Conference Series

Volumn 210, Issue , 2010, Pages

  Sergent, S ^a,d   Moreno, J C ^a   Frayssinet, E ^a   Laaroussi, Y ^a   Chenot, S ^a   Renard, J ^b   Sam Giao, D ^b   Gayral, B ^b   Neel D ^c   David, S ^c   Boucaud, P ^c   Leroux, M ^a   Semond, F ^a  

^a CRHEA CNRS   (France)

^b CEA GRENOBLE   (France)

^c CNRS   (France)

^d UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM NITRIDE; NANOCRYSTALS; OPTICAL WAVEGUIDES; PHOTOLITHOGRAPHY; SPEECH RECOGNITION; SUBSTRATES; WHISPERING GALLERY MODES;

E-BEAM LITHOGRAPHY; GAN QUANTUM DOTS; MICRODISKS; MODE SPACING; QUALITY FACTORS; SCATTERING LOSS; SIDEWALL ROUGHNESS; SILICON SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77950473395     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/210/1/012005     Document Type: Conference Paper

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