Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 μm using cavity-confined slow light

Optics Express

Volumn 17, Issue 7, 2009, Pages 5439-5445

  Bordas, Frédéric ^a   Seassal, Christian ^a   Dupuy, Emmanuel ^a   Regreny, Philipe ^a   Gendry, Michel ^a   Viktorovich, Pierre ^a   Steel, M J ^b   Rahmani, Adel ^c  

^a ECOLE CENTRALE DE LYON   (France)

^b MACQUARIE UNIVERSITY   (Australia)

^c UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; LASER EXCITATION; NANOCRYSTALS; PHOTONIC CRYSTALS; SEMICONDUCTOR QUANTUM DOTS; TIME DOMAIN ANALYSIS;

ELECTROMAGNETIC MODES; FABRICATION IMPERFECTIONS; FINITE DIFFERENCE IN TIME DOMAINS; INAS/INP QUANTUM DOTS; PHOTONIC CRYSTAL SLAB; SINGLE-MODE PHOTONIC CRYSTAL; UNDER PULSED EXCITATIONS; VALENCE BAND EDGES;

SLOW LIGHT;

INDIUM; INDIUM ARSENIDE; INDIUM PHOSPHIDE; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; LASER; PHOTON; REPRODUCIBILITY; SENSITIVITY AND SPECIFICITY; TEMPERATURE;

ARSENICALS; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; LASERS; MINIATURIZATION; PHOSPHINES; PHOTONS; QUANTUM DOTS; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; TEMPERATURE;

EID: 65149093654     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.005439     Document Type: Article

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