Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Applied Surface Science

Volumn 256, Issue 6, 2010, Pages 1803-1806

  Komatsu, Naoyoshi ^a   Masumoto, Keiko ^a   Aoki, Hidemitsu ^a   Kimura, Chiharu ^a   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AlO; AlSiO; Insulator; MIS; Power device; Wide bandgap

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; ENERGY GAP; GOLD COMPOUNDS; LEAKAGE CURRENTS; MANAGEMENT INFORMATION SYSTEMS; OXIDE FILMS;

ALSIO; C-V CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; HIGH DIELECTRIC CONSTANTS; INSULATOR; LOW-LEAKAGE CURRENT; POWER DEVICES; WIDE BAND GAP;

POWER SEMICONDUCTOR DEVICES;

EID: 72549109871     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.009     Document Type: Article

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