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Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

Very smooth SiO2/SiC interface formed by supercritical water oxidation at low temperature

(6) Futatsuki, Takashi a,b Oe, Taro b Aoki, Hidemitsu a Komatsu, Naoyoshi a Kimura, Chiharu a Sugino, Takashi a

a OSAKA UNIVERSITY (Japan)

b Japan Organo Co (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; SILICA; SILICON CARBIDE; THERMOOXIDATION;

FIELD EFFECT TRANSISTOR (FETS); HIGH-PRESSURE CONDITION; LOW-TEMPERATURE OXIDATION; LOWER TEMPERATURES; MOBILITY PERFORMANCE; SUITABLE CONDITIONS; SUPERCRITICAL WATER; SUPERCRITICAL WATER OXIDATION;

TEMPERATURE;

EID: 77952733679 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DF18 Document Type: Article

Times cited : (2)

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