Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3212-3217

  Cen, Zhan Hong ^a   Chen, T P ^a   Ding, Liang ^a,b   Liu, Yang ^c   Liu, Zhen ^a   Yang, Ming ^a   Wong, Jen It ^a   Goh, W P ^d   Zhu, Fu Rong ^d   Fung, S ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Charge trapping; Electroluminescence quenching; Reactivation; Si implanted silicon nitride

Indexed keywords

DE-TRAPPING; DEFECT STATE; FORWARD BIAS; LIGHT EMITTING DEVICES; LOW TEMPERATURE ANNEALING; QUENCHING PHENOMENA; QUENCHING RATE; RADIATIVE RECOMBINATION; REACTIVATION; REVERSE GATE; SILICON NITRIDE THIN FILMS; SPECTRUM SHAPE; TRAPPED CHARGE;

CHARGE TRAPPING; QUENCHING; SILICON; SILICON NITRIDE; THIN FILMS;

ELECTROLUMINESCENCE;

EID: 79959198293     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033009     Document Type: Article

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