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Volumn 519, Issue 14, 2011, Pages 4598-4602

Laterally organized carbon nanotube arrays based on hot-filament chemical vapor deposition

Author keywords

Carbon nanotubes; Hot filament chemical vapor deposition; Porous anodic alumina

Indexed keywords

A-CARBON; CARBON NANOTUBE ARRAY; ETCHING AGENTS; GAS LINES; HOT-FILAMENT; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; LOW SUBSTRATE TEMPERATURE; PARAMETRIC STUDY; POROUS ANODIC ALUMINA; POROUS ANODIC ALUMINA TEMPLATE;

EID: 79958834616     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.334     Document Type: Conference Paper
Times cited : (6)

References (20)
  • 10
    • 79958779057 scopus 로고    scopus 로고
    • At the 2008 IEDM conference (15-17 December), Intel announced 1.55 mA/μm for NMOS and 1.21 mA/μm for PMOS transistors, using their 32 nm platform
    • At the 2008 IEDM conference (15-17 December), Intel announced 1.55 mA/μm for NMOS and 1.21 mA/μm for PMOS transistors, using their 32 nm platform.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.