Variations in electrical and physical properties of Al:ZnO films with preparation conditions

Metals and Materials International

Volumn 17, Issue 1, 2011, Pages 99-104

  Son, J I ^a   Shim, J H ^b   Cho, N H ^a  

^a Inha University   (South Korea)

^b University of Washington   (United States)

Author keywords

Annealing; Electrical properties; Residual stress; Sputtering; Thin films

Indexed keywords

ANNEALING; CARRIER MOBILITY; COMPRESSIVE STRESS; ELECTRIC PROPERTIES; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; OXIDE MINERALS; OXYGEN VACANCIES; RESIDUAL STRESSES; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC OXIDE;

DIFFRACTION PEAKS; POST DEPOSITION ANNEALING; PREPARATION CONDITIONS; REDUCING ATMOSPHERE; RF-MAGNETRON SPUTTERING; SI (001) SUBSTRATE; SUBSTRATE TEMPERATURE; ZNO FILMS;

FILM PREPARATION;

EID: 79958709154     PISSN: 15989623     EISSN: 20054149     Source Type: Journal    
DOI: 10.1007/s12540-011-0213-1     Document Type: Article

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