Growth and transport properties of layered bismuth telluride thin films via radio frequency magnetron sputtering

Wuji Cailiao Xuebao/Journal of Inorganic Materials

Volumn 26, Issue 5, 2011, Pages 555-560

  Zhang, Zhi Wei ^a   Wang, Yao ^a   Deng, Yuan ^a   Tan, Ming ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

Bismuth telluride; Radio frequency magnetron sputtering; Thermoelectric properties; Thin film

Indexed keywords

BISMUTH TELLURIDE; BISMUTH TELLURIDE THIN FILMS; CHEMICAL COMPOSITIONS; ELECTRICAL TRANSPORT PROPERTIES; ENERGY DISPERSIVE; HIGH TEMPERATURE; KEY FACTORS; LAYERED NANOSTRUCTURE; POWER FACTORS; RADIO FREQUENCY MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPES; SUBSTRATE TEMPERATURE; THERMOELECTRIC PROPERTIES; VARIOUS SUBSTRATES;

BISMUTH; BISMUTH COMPOUNDS; ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MICROSTRUCTURE; NANOSTRUCTURES; RADIO; RADIO WAVES; SCANNING ELECTRON MICROSCOPY; THERMOELECTRIC EQUIPMENT; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

THIN FILMS;

EID: 79958235676     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: 10.3724/SP.J.1077.2011.11030     Document Type: Article

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